mpw-sic-130-nm-en

project runs – SIC Ultra-Low Resistivity 130 nm

Ultra-Low Resistivity SiC MPW Run – Now Open!

130 nm minimum feature size

Main advantages:

Extremely low resistivity: 0.001–0.002 Ω·cm
Eliminates charging artifacts
Perfect for EV power modules, high-voltage devices, RF applications, and beam-sensitive tech

Included capabilities:

Direct SiC-SiC bonding
SiCOI options
Advanced DUV lithography at 130 nm

Slots are limited – register today!