services -> fabrication
micro and nano – fabrication service
photo lithographie
Precision Lithography Foundry – 10 nm to 100 nm, 4″ to 8″ Wafers
25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (≤ 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features for 4″ to full 8″ volume production of TFLN, InP, and MEMS PICs), maskless laser direct writing (≥ 300 nm for rapid prototyping and microfluidics), and double-side contact/projection aligners (≥ 0.8 µm with sub-micron front/back alignment for MEMS and bonding). All processes share unified design rules and metrology, ensuring zero-risk transitions from 10 nm R&D to 100 nm high-yield 8-inch runs. When precision, scale, and reliability matter, 25FAB delivers unmatched lithographic flexibility.
Main Function:
25FAB delivers the world’s broadest lithography portfolio — from ≤10 nm EBL to 100 nm full 8-inch DUV stepper — enabling seamless transition from ultimate-resolution research to high-yield volume production in a single foundry.
etching
Industry-Leading Dry Etching for Piezoelectric & Photonic Thin Films
Full 4-inch → 8-inch (plus chip/piece) capability with the most complete dry-etch portfolio for LiNbO₃, LTO, PLZT, PZT, AlN, ScAlN, quartz, and all piezo/photonic thin films:
High-rate, low-damage ICP/RIE for LiNbO₃, LTO, PZT, AlN
Ultra-smooth IBE for piezoelectric stacks and metals
Scallop-free DRIE for high-aspect-ratio piezo structures
Stiction-free vapor-phase HF / XeF₂ release
Uniformity <1.5 % (3σ), sidewall roughness <1.5 nm RMS, damage-free profiles — proven across full 200 mm wafers.
Main Function:
25FAB delivers damage-free, ultra-precise dry etching (ICP/RIE/DRIE/IBE/vapor HF & XeF₂) of LiNbO₃, LTO, PLZT, PZT, AlN, AlScN, Si₃N₄, SiO₂, metals (Al/Ti/Ta/W/Au/Cu), and all related photonic/piezoelectric stacks from single chips to full 8-inch wafers.
medium-current ion implantation service
Wafer size: 4, 6, 8, 12 inch and non-standard/custom shapes
Energy range: 5 – 210 keV
Dose range: 5×10¹¹ – 1×10¹⁷ ions/cm²
Implant angle: Tilt 0°–60°, Twist 0°–359° (full 4-axis control)
Supported species: H, He, P (other species available on request)
Compatible substrates: SiC, Si, LiNbO₃, LiTaO₃, diamond, LNOI/LTOI, quartz
Main Function:
25FAB performs controlled doping and material modification of H, He, and P in SiC, LiNbO₃, LiTaO₃, diamond, and silicon substrates up to 12-inch using medium-current ion implantation.
precision back-grinding & stress-relief service
4–8 inch Wafers
Starting thickness: ≤ 2200 µm
Final TTV: < 1 µm (200 mm wafer)
Surface finish:
– Si, LiNbO₃, LiTaO₃, SiO₂, YAG: Ra < 10 nm
– 4H/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch / dry polish)
Main Function:
25FAB provides high-precision back-grinding and surface finishing for 4–8 inch SiC, LiNbO₃, LiTaO₃, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.
chemical mechanical polishing (CMP) service
4–8 inch Wafers
Wafer size: 4, 6, 8 inch
Thickness range: 290 – 1100 µm
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO₃ (LN), LiTaO₃ (LT), SiO₂, LNOI, bonded stacks, and other composite materials.
Main Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4–8 inch wafers, delivering sub-ångström roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.
high-temperature LPCVD furnace suite
4-inch to full 8-inch (200 mm) capability
Stress-tuned Si₃N₄ (tensile/compressive, 10–800 nm) with refractive index 1.98–2.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 °C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO₃-safe deposition
From ultra-low-loss Si₃N₄ photonics to high-quality gate/passivation oxides – all with volume-ready uniformity on full 200 mm wafers.
Main Function:
25FAB delivers stress-controlled LPCVD Si₃N₄, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4–8 inch wafers for photonics, MEMS, and piezo-electric platforms.
precision wafer dicing & advanced shaping
4-inch to 8-inch Full-Service Dicing Platform
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO₃, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular / Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 µm thin LiNbO₃
From standard rectangles to fully custom contours on the most delicate photonic/piezoelectric wafers – 25FAB cuts what others won’t.
Main Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4–8 inch fragile compound, piezoelectric, and photonic wafers.
room temperature bonding
Wafer Size: 4, 6, 8 inch
Wafer Thickness: ＜1000µm
Alignment Accuracy: X,Y≤70µm、θ≤0.2deg
Bonding Energy: 1.0-2.0 J/m²
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO₂, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.
Main Function:
Homogeneous and Heterogeneous Material Bonding
hydrophilic/ hybrid bonding
Wafer Size: 6, 8 inch
Wafer Thickness: 6inch≤700µm 8inch≤800µm
Wafer Thickness: 1.4 – 2.0 J/m²
Processed Wafer Types: Si, SiO₂, LT, LN, InP, GaAs, SiN,etc.
Main Function:
Homogeneous and Heterogeneous Material Bonding
thermocompression anodic bonding
Wafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 – 3mm
Alignment Accuracy: ≤ 0.5mm (mechanical alignment), ≤ 2μm (optical alignment)
Bonding Energy: ≥ 2.0 J/m²
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.
Main Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding
ion beam polishing and etching machine
Wafer Size: 4, 6, 8 inch
Wafer Thickness: 400 – 1000μm
Equipment Capability: Increase THK sigma by more than 3 times (SiO₂ THK Range < 10Å; LT0I/LN0I range < 100Å; SiC0I range < 1000Å. The range is affected by the previous value of the film – layer material)
Processed Wafer Types: SOI, SiO₂, SiC composite substrates, LNOI, LTOI and other film – coated materials
Main Function:
Etching various thin – film materials and performing film – thickness adjustment
high-uniformity copper electroplating for photonic & MEMS interconnects
Void-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 µm to >100 µm in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity ≤ 2 % (1σ), wafer-to-wafer ≤ 1.5 %
Compatible with LiNbO₃, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures
From thin seed enhancement to 100 µm+ thick power routing – 25FAB delivers the industry’s most reliable copper electroplating for next-generation hybrid photonic devices.
Main Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 µm thickness with multi-layer 3D interconnect capability on 4–8 inch photonic, piezoelectric, and compound-semiconductor wafers.
advanced PVD: sputter & e-beam evaporation
4-inch to Full 8-inch (200 mm) Volume-Ready Platform
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO₃, SiO₂, Al₂O₃, TiO₂, ITO, HfO₂, Ta₂O₅ (<0.8 % 1σ uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control ±10 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 °C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks
Main Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k/refractory dielectrics with atomic-level control across 4–8 inch wafers for photonics, MEMS, and quantum applications.
wafer-scale nanoimprint lithography (UV-NIL & thermal)
4-inch to Full 8-inch Production Platform
Resolution down to ≤ 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy ≤ 5 nm (3σ) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO₃, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1/cm², residual layer thickness < 8 nm, uniformity < 3 %
From single prototypes to 10 k+wph volume — the fastest path from sub-20 nm photonic nanostructures to market.
Main Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with ≤12 nm resolution, ≤5 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR/VR optics.
wafer-defect inspection machine
4-inch to 8-inch Automated Review & Classification
Wafer sizes: 4″ / 6″ / 8″ (290–1000 µm thickness)
Detection sensitivity: ≥ 0.2 µm particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO₃ (LN), LiTaO₃ (LT), LNOI/LTOI, SOI, quartz, glass, GaN, InP, and all composite/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.
Main Function:
25FAB provides automated ≥0.2 µm defect detection and classification (BF/DF/PL) across 4–8 inch Si, SiC, LiNbO₃, LiTaO₃, and all photonic/compound wafers with full traceability and process-loop integration.
Precision Wafer Trimming & Edge Profiling
Wafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: ≤ 1000 µm (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO₃, LiTaO₃, LNOI/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.
Main Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all ≤8-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.
precision wafer flatness & geometry metrology
4-inch to 8-inch | 300–1000 µm Thickness
Dual-sided interferometric + capacitive sensing
Key parameters: TTV ≤ 0.3 µm, LTV ≤ 0.2 µm, Warp/Bow ≤ 3 µm, Thickness variation ≤ 0.5 µm (3σ across 200 mm)
Full-surface, high-density mapping (>1 million points/wafer) in <60 s
Compatible with all substrates: LiNbO₃, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR/SBIR/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.
Main Function:
25FAB delivers sub-micron TTV/Warp/Bow/Thickness metrology and full geometric characterization for all 4–8 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.
nanoscribe-powered two-photon polymerization (TPP) 3D printing service
True Sub-Micron Direct-Write on 4–8 inch Wafers & Fibers
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed ≤ 200 nm
Vertical resolution: typical 400–1000 nm
Maximum single-field print volume: 500 × 500 × 300 µm (stitching-free)
Refractive index: n = 1.56 (IP-Dip / custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR/VR near-eye optics
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets – from one-off prototypes to thousands of devices per wafer.
Main Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with ≤160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.
comprehensive piezoelectric thin-film characterization lab
Full 4–8 inch Wafer Mapping | Production-Ready Accuracy
d₃₃ & d₃₁ coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm/V for AlScN, >150 pm/V for PZT
e₃₁,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV/cm, >10¹⁰ cycles endurance testing
Dielectric constant & loss: 1 kHz–10 MHz, tanδ < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV/cm
Full-wafer ferroelectric uniformity mapping: 49–121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman/XRD
All measurements performed with calibration traceable to PTB/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.
Main Function:
25FAB provides full electrical and piezoelectric characterization (d₃₃, e₃₁, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4–8 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.
FIB + TEM service for photonic & piezoelectric devices
TEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
– Routine thickness ≤ 30 nm (critical for HR-TEM/STEM)
– Protective Pt/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
– Site-specific cross-sections on LiNbO₃, AlScN, PZT, LNOI, InP PICs, metasurfaces
– High-throughput: 4–6 perfect lamellae per 8-hour shift
Atomic-resolution TEM/STEM:
– Thermo Fisher Spectra 300 Cs-corrected (300 kV)
– Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
– Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks
Main Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM/STEM/EELS analysis on all 4–8 inch photonic, piezoelectric, and compound-semiconductor devices.
advanced surface & materials characterization suite
AFM (Bruker Dimension Icon):
– Ra < 0.1 nm on polished LN/Si₃N₄, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
– Resolution 0.8 nm @ 15 kV, In-lens/SE/BSE, low-kV imaging of LNOI/TFLN without charging
EDS/EDX (Oxford X-Maxⁿ 150 mm²):
– Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4–8 inch wafer-capable stages, <30 min SEM→AFM→EDX cross-correlation
Main Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.