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<\/a><\/figure>\n<\/div>\n\n\n\nmicro and nano \u2013 fabrication service<\/h1>\n\n\n\n
\n\n\n\n\n\n\nphoto lithographie<\/strong><\/h2>\n\n\n\nPrecision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers
25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features for 4\u2033 to full 8\u2033 volume production of TFLN, InP, and MEMS PICs), maskless laser direct writing (\u2265 300 nm for rapid prototyping and microfluidics), and double-side contact\/projection aligners (\u2265 0.8 \u00b5m with sub-micron front\/back alignment for MEMS and bonding). All processes share unified design rules and metrology, ensuring zero-risk transitions from 10 nm R&D to 100 nm high-yield 8-inch runs. When precision, scale, and reliability matter, 25FAB delivers unmatched lithographic flexibility.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers the world\u2019s broadest lithography portfolio \u2014 from \u226410 nm EBL to 100 nm full 8-inch DUV stepper \u2014 enabling seamless transition from ultimate-resolution research to high-yield volume production in a single foundry.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\netching<\/strong><\/h2>\n\n\n\nIndustry-Leading Dry Etching for Piezoelectric & Photonic Thin Films
Full 4-inch \u2192 8-inch (plus chip\/piece) capability with the most complete dry-etch portfolio for LiNbO\u2083, LTO, PLZT, PZT, AlN, ScAlN, quartz, and all piezo\/photonic thin films:<\/p>\n\n\n\n
High-rate, low-damage ICP\/RIE for LiNbO\u2083, LTO, PZT, AlN
Ultra-smooth IBE for piezoelectric stacks and metals
Scallop-free DRIE for high-aspect-ratio piezo structures
Stiction-free vapor-phase HF \/ XeF\u2082 release<\/p>\n\n\n\n
Uniformity <1.5 % (3\u03c3), sidewall roughness <1.5 nm RMS, damage-free profiles \u2014 proven across full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free, ultra-precise dry etching (ICP\/RIE\/DRIE\/IBE\/vapor HF & XeF\u2082) of LiNbO\u2083, LTO, PLZT, PZT, AlN, AlScN, Si\u2083N\u2084, SiO\u2082, metals (Al\/Ti\/Ta\/W\/Au\/Cu), and all related photonic\/piezoelectric stacks from single chips to full 8-inch wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nmedium-current ion implantation service<\/strong><\/h2>\n\n\n\nWafer size: 4, 6, 8, 12 inch and non-standard\/custom shapes
Energy range: 5 \u2013 210 keV
Dose range: 5\u00d710\u00b9\u00b9 \u2013 1\u00d710\u00b9\u2077 ions\/cm\u00b2
Implant angle: Tilt 0\u00b0\u201360\u00b0, Twist 0\u00b0\u2013359\u00b0 (full 4-axis control)
Supported species: H, He, P (other species available on request)
Compatible substrates: SiC, Si, LiNbO\u2083, LiTaO\u2083, diamond, LNOI\/LTOI, quartz<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB performs controlled doping and material modification of H, He, and P in SiC, LiNbO\u2083, LiTaO\u2083, diamond, and silicon substrates up to 12-inch using medium-current ion implantation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision back-grinding & stress-relief service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Starting thickness: \u2264 2200 \u00b5m
Final TTV: < 1 \u00b5m (200 mm wafer)
Surface finish:
\u2013 Si, LiNbO\u2083, LiTaO\u2083, SiO\u2082, YAG: Ra < 10 nm
\u2013 4H\/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch \/ dry polish)<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides high-precision back-grinding and surface finishing for 4\u20138 inch SiC, LiNbO\u2083, LiTaO\u2083, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nchemical mechanical polishing (CMP) service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Wafer size: 4, 6, 8 inch
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
photo lithographie<\/strong><\/h2>\n\n\n\nPrecision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers
25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features for 4\u2033 to full 8\u2033 volume production of TFLN, InP, and MEMS PICs), maskless laser direct writing (\u2265 300 nm for rapid prototyping and microfluidics), and double-side contact\/projection aligners (\u2265 0.8 \u00b5m with sub-micron front\/back alignment for MEMS and bonding). All processes share unified design rules and metrology, ensuring zero-risk transitions from 10 nm R&D to 100 nm high-yield 8-inch runs. When precision, scale, and reliability matter, 25FAB delivers unmatched lithographic flexibility.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers the world\u2019s broadest lithography portfolio \u2014 from \u226410 nm EBL to 100 nm full 8-inch DUV stepper \u2014 enabling seamless transition from ultimate-resolution research to high-yield volume production in a single foundry.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\netching<\/strong><\/h2>\n\n\n\nIndustry-Leading Dry Etching for Piezoelectric & Photonic Thin Films
Full 4-inch \u2192 8-inch (plus chip\/piece) capability with the most complete dry-etch portfolio for LiNbO\u2083, LTO, PLZT, PZT, AlN, ScAlN, quartz, and all piezo\/photonic thin films:<\/p>\n\n\n\n
High-rate, low-damage ICP\/RIE for LiNbO\u2083, LTO, PZT, AlN
Ultra-smooth IBE for piezoelectric stacks and metals
Scallop-free DRIE for high-aspect-ratio piezo structures
Stiction-free vapor-phase HF \/ XeF\u2082 release<\/p>\n\n\n\n
Uniformity <1.5 % (3\u03c3), sidewall roughness <1.5 nm RMS, damage-free profiles \u2014 proven across full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free, ultra-precise dry etching (ICP\/RIE\/DRIE\/IBE\/vapor HF & XeF\u2082) of LiNbO\u2083, LTO, PLZT, PZT, AlN, AlScN, Si\u2083N\u2084, SiO\u2082, metals (Al\/Ti\/Ta\/W\/Au\/Cu), and all related photonic\/piezoelectric stacks from single chips to full 8-inch wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nmedium-current ion implantation service<\/strong><\/h2>\n\n\n\nWafer size: 4, 6, 8, 12 inch and non-standard\/custom shapes
Energy range: 5 \u2013 210 keV
Dose range: 5\u00d710\u00b9\u00b9 \u2013 1\u00d710\u00b9\u2077 ions\/cm\u00b2
Implant angle: Tilt 0\u00b0\u201360\u00b0, Twist 0\u00b0\u2013359\u00b0 (full 4-axis control)
Supported species: H, He, P (other species available on request)
Compatible substrates: SiC, Si, LiNbO\u2083, LiTaO\u2083, diamond, LNOI\/LTOI, quartz<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB performs controlled doping and material modification of H, He, and P in SiC, LiNbO\u2083, LiTaO\u2083, diamond, and silicon substrates up to 12-inch using medium-current ion implantation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision back-grinding & stress-relief service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Starting thickness: \u2264 2200 \u00b5m
Final TTV: < 1 \u00b5m (200 mm wafer)
Surface finish:
\u2013 Si, LiNbO\u2083, LiTaO\u2083, SiO\u2082, YAG: Ra < 10 nm
\u2013 4H\/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch \/ dry polish)<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides high-precision back-grinding and surface finishing for 4\u20138 inch SiC, LiNbO\u2083, LiTaO\u2083, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nchemical mechanical polishing (CMP) service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Wafer size: 4, 6, 8 inch
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features for 4\u2033 to full 8\u2033 volume production of TFLN, InP, and MEMS PICs), maskless laser direct writing (\u2265 300 nm for rapid prototyping and microfluidics), and double-side contact\/projection aligners (\u2265 0.8 \u00b5m with sub-micron front\/back alignment for MEMS and bonding). All processes share unified design rules and metrology, ensuring zero-risk transitions from 10 nm R&D to 100 nm high-yield 8-inch runs. When precision, scale, and reliability matter, 25FAB delivers unmatched lithographic flexibility.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB delivers the world\u2019s broadest lithography portfolio \u2014 from \u226410 nm EBL to 100 nm full 8-inch DUV stepper \u2014 enabling seamless transition from ultimate-resolution research to high-yield volume production in a single foundry.<\/p>\n<\/div>\n<\/div>\n\n\n\n
etching<\/strong><\/h2>\n\n\n\nIndustry-Leading Dry Etching for Piezoelectric & Photonic Thin Films
Full 4-inch \u2192 8-inch (plus chip\/piece) capability with the most complete dry-etch portfolio for LiNbO\u2083, LTO, PLZT, PZT, AlN, ScAlN, quartz, and all piezo\/photonic thin films:<\/p>\n\n\n\n
High-rate, low-damage ICP\/RIE for LiNbO\u2083, LTO, PZT, AlN
Ultra-smooth IBE for piezoelectric stacks and metals
Scallop-free DRIE for high-aspect-ratio piezo structures
Stiction-free vapor-phase HF \/ XeF\u2082 release<\/p>\n\n\n\n
Uniformity <1.5 % (3\u03c3), sidewall roughness <1.5 nm RMS, damage-free profiles \u2014 proven across full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free, ultra-precise dry etching (ICP\/RIE\/DRIE\/IBE\/vapor HF & XeF\u2082) of LiNbO\u2083, LTO, PLZT, PZT, AlN, AlScN, Si\u2083N\u2084, SiO\u2082, metals (Al\/Ti\/Ta\/W\/Au\/Cu), and all related photonic\/piezoelectric stacks from single chips to full 8-inch wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nmedium-current ion implantation service<\/strong><\/h2>\n\n\n\nWafer size: 4, 6, 8, 12 inch and non-standard\/custom shapes
Energy range: 5 \u2013 210 keV
Dose range: 5\u00d710\u00b9\u00b9 \u2013 1\u00d710\u00b9\u2077 ions\/cm\u00b2
Implant angle: Tilt 0\u00b0\u201360\u00b0, Twist 0\u00b0\u2013359\u00b0 (full 4-axis control)
Supported species: H, He, P (other species available on request)
Compatible substrates: SiC, Si, LiNbO\u2083, LiTaO\u2083, diamond, LNOI\/LTOI, quartz<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB performs controlled doping and material modification of H, He, and P in SiC, LiNbO\u2083, LiTaO\u2083, diamond, and silicon substrates up to 12-inch using medium-current ion implantation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision back-grinding & stress-relief service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Starting thickness: \u2264 2200 \u00b5m
Final TTV: < 1 \u00b5m (200 mm wafer)
Surface finish:
\u2013 Si, LiNbO\u2083, LiTaO\u2083, SiO\u2082, YAG: Ra < 10 nm
\u2013 4H\/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch \/ dry polish)<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides high-precision back-grinding and surface finishing for 4\u20138 inch SiC, LiNbO\u2083, LiTaO\u2083, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nchemical mechanical polishing (CMP) service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Wafer size: 4, 6, 8 inch
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Full 4-inch \u2192 8-inch (plus chip\/piece) capability with the most complete dry-etch portfolio for LiNbO\u2083, LTO, PLZT, PZT, AlN, ScAlN, quartz, and all piezo\/photonic thin films:<\/p>\n\n\n\n
Ultra-smooth IBE for piezoelectric stacks and metals
Scallop-free DRIE for high-aspect-ratio piezo structures
Stiction-free vapor-phase HF \/ XeF\u2082 release<\/p>\n\n\n\n
Main Function:
25FAB delivers damage-free, ultra-precise dry etching (ICP\/RIE\/DRIE\/IBE\/vapor HF & XeF\u2082) of LiNbO\u2083, LTO, PLZT, PZT, AlN, AlScN, Si\u2083N\u2084, SiO\u2082, metals (Al\/Ti\/Ta\/W\/Au\/Cu), and all related photonic\/piezoelectric stacks from single chips to full 8-inch wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
medium-current ion implantation service<\/strong><\/h2>\n\n\n\nWafer size: 4, 6, 8, 12 inch and non-standard\/custom shapes
Energy range: 5 \u2013 210 keV
Dose range: 5\u00d710\u00b9\u00b9 \u2013 1\u00d710\u00b9\u2077 ions\/cm\u00b2
Implant angle: Tilt 0\u00b0\u201360\u00b0, Twist 0\u00b0\u2013359\u00b0 (full 4-axis control)
Supported species: H, He, P (other species available on request)
Compatible substrates: SiC, Si, LiNbO\u2083, LiTaO\u2083, diamond, LNOI\/LTOI, quartz<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB performs controlled doping and material modification of H, He, and P in SiC, LiNbO\u2083, LiTaO\u2083, diamond, and silicon substrates up to 12-inch using medium-current ion implantation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision back-grinding & stress-relief service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Starting thickness: \u2264 2200 \u00b5m
Final TTV: < 1 \u00b5m (200 mm wafer)
Surface finish:
\u2013 Si, LiNbO\u2083, LiTaO\u2083, SiO\u2082, YAG: Ra < 10 nm
\u2013 4H\/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch \/ dry polish)<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides high-precision back-grinding and surface finishing for 4\u20138 inch SiC, LiNbO\u2083, LiTaO\u2083, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nchemical mechanical polishing (CMP) service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Wafer size: 4, 6, 8 inch
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Energy range: 5 \u2013 210 keV
Dose range: 5\u00d710\u00b9\u00b9 \u2013 1\u00d710\u00b9\u2077 ions\/cm\u00b2
Implant angle: Tilt 0\u00b0\u201360\u00b0, Twist 0\u00b0\u2013359\u00b0 (full 4-axis control)
Supported species: H, He, P (other species available on request)
Compatible substrates: SiC, Si, LiNbO\u2083, LiTaO\u2083, diamond, LNOI\/LTOI, quartz<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB performs controlled doping and material modification of H, He, and P in SiC, LiNbO\u2083, LiTaO\u2083, diamond, and silicon substrates up to 12-inch using medium-current ion implantation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
precision back-grinding & stress-relief service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Starting thickness: \u2264 2200 \u00b5m
Final TTV: < 1 \u00b5m (200 mm wafer)
Surface finish:
\u2013 Si, LiNbO\u2083, LiTaO\u2083, SiO\u2082, YAG: Ra < 10 nm
\u2013 4H\/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch \/ dry polish)<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides high-precision back-grinding and surface finishing for 4\u20138 inch SiC, LiNbO\u2083, LiTaO\u2083, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nchemical mechanical polishing (CMP) service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Wafer size: 4, 6, 8 inch
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Final TTV: < 1 \u00b5m (200 mm wafer)
Surface finish:
\u2013 Si, LiNbO\u2083, LiTaO\u2083, SiO\u2082, YAG: Ra < 10 nm
\u2013 4H\/6H-SiC (mono- & polycrystalline): Ra < 3 nm
Compatible materials: SiC, Si, LN, LT, LNOI, quartz, sapphire, YAG
Full stress-relief and sub-surface damage removal options (wet etch \/ dry polish)<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB provides high-precision back-grinding and surface finishing for 4\u20138 inch SiC, LiNbO\u2083, LiTaO\u2083, and related substrates to achieve sub-micron TTV and nanometer-scale roughness, enabling thin-wafer packaging, reduced thermal resistance, and improved device-level heat dissipation.<\/p>\n<\/div>\n<\/div>\n\n\n\n
chemical mechanical polishing (CMP) service<\/strong><\/h2>\n\n\n\n4\u20138 inch Wafers<\/p>\n\n\n\n
Wafer size: 4, 6, 8 inch
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Thickness range: 290 \u2013 1100 \u00b5m
Surface roughness: Ra < 0.2 nm (polycrystalline SiC Ra < 0.5 nm)
Removal control: < 40 nm total thickness variation across wafer
Compatible substrates: monocrystalline and polycrystalline SiC, Si, LiNbO\u2083 (LN), LiTaO\u2083 (LT), SiO\u2082, LNOI, bonded stacks, and other composite materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB provides production-grade CMP to planarize and polish thin films on 4\u20138 inch wafers, delivering sub-\u00e5ngstr\u00f6m roughness and sub-40 nm thickness uniformity for photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
high-temperature LPCVD furnace suite<\/strong><\/h2>\n\n\n\n4-inch to full 8-inch (200 mm) capability<\/strong>
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\nFrom ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Stress-tuned Si\u2083N\u2084 (tensile\/compressive, 10\u2013800 nm) with refractive index 1.98\u20132.05 @ 1550 nm
HTO (High-Temperature Oxide) and LTO (Low-Temperature Oxide) with <1 % within-wafer uniformity Ultra-low stress and strain-gradient nitride for suspended membranes, waveguides, and photonic crystals Poly-Si, amorphous Si, and high-temperature anneal (>1100 \u00b0C) in the same cluster
Hydrogen-free processes for CMOS-compatible and LiNbO\u2083-safe deposition<\/p>\n\n\n\n
From ultra-low-loss Si\u2083N\u2084 photonics to high-quality gate\/passivation oxides \u2013 all with volume-ready uniformity on full 200 mm wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB delivers stress-controlled LPCVD Si\u2083N\u2084, HTO, LTO, poly-Si, and high-temperature annealing with atomic-level uniformity across 4\u20138 inch wafers for photonics, MEMS, and piezo-electric platforms.<\/p>\n<\/div>\n<\/div>\n\n\n\n
precision wafer dicing & advanced shaping<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Full-Service Dicing Platform<\/p>\n\n\n\n
Plasma-based Stealth Dicing: zero-chipping, kerf-free, ultra-thin die separation for LiNbO\u2083, LTO, SOI, GaN, SiC and fragile thin-film stacks
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
From standard rectangles to fully custom contours on the most delicate photonic\/piezoelectric wafers \u2013 25FAB cuts what others won\u2019t.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nroom temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Irregular \/ Custom Shape Dicing: free-form, curved, hexagonal, multi-radius, or any complex geometry with micron precision
High-speed blade dicing, DBG, and multi-project panelization also available
Die strength > 750 MPa routinely achieved on 50 \u00b5m thin LiNbO\u2083<\/p>\n\n\n\n
Main Function:
25FAB provides chipping-free stealth dicing and fully custom-shaped die separation (any geometry) for 4\u20138 inch fragile compound, piezoelectric, and photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
room temperature bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Wafer Thickness: \uff1c1000\u00b5m
Alignment Accuracy: X,Y\u226470\u00b5m\u3001\u03b8\u22640.2deg
Bonding Energy: 1.0-2.0 J\/m\u00b2
Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO\u2082, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
hydrophilic\/ hybrid bonding<\/strong><\/h2>\n\n\n\nWafer Size: 6, 8 inch
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nthermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Wafer Thickness: 6inch\u2264700\u00b5m 8inch\u2264800\u00b5m
Wafer Thickness: 1.4 \u2013 2.0 J\/m\u00b2
Processed Wafer Types: Si, SiO\u2082, LT, LN, InP, GaAs, SiN,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
Homogeneous and Heterogeneous Material Bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
thermocompression anodic bonding<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8, 12 inch
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Wafer Thickness: 0.3 \u2013 3mm
Alignment Accuracy: \u2264 0.5mm (mechanical alignment), \u2264 2\u03bcm (optical alignment)
Bonding Energy: \u2265 2.0 J\/m\u00b2
Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding<\/p>\n<\/div>\n<\/div>\n\n\n\n
ion beam polishing and etching machine<\/strong><\/h2>\n\n\n\nWafer Size: 4, 6, 8 inch
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nhigh-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Wafer Thickness: 400 \u2013 1000\u03bcm
Equipment Capability: Increase THK sigma by more than 3 times (SiO\u2082 THK Range < 10\u00c5; LT0I\/LN0I range < 100\u00c5; SiC0I range < 1000\u00c5. The range is affected by the previous value of the film \u2013 layer material)
Processed Wafer Types: SOI, SiO\u2082, SiC composite substrates, LNOI, LTOI and other film \u2013 coated materials<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
Etching various thin \u2013 film materials and performing film \u2013 thickness adjustment<\/p>\n<\/div>\n<\/div>\n\n\n\n
high-uniformity copper electroplating for photonic & MEMS interconnects<\/strong><\/h2>\n\n\n\nVoid-free copper filling of high-aspect-ratio TSVs, trenches and pillars
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
From thin seed enhancement to 100 \u00b5m+ thick power routing \u2013 25FAB delivers the industry\u2019s most reliable copper electroplating for next-generation hybrid photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Thickness capability from <1 \u00b5m to >100 \u00b5m in a single step
Multi-layer 3D interconnects with seamless via-chain stacking
Within-wafer uniformity \u2264 2 % (1\u03c3), wafer-to-wafer \u2264 1.5 %
Compatible with LiNbO\u2083, LTO, SOI, InP, glass and thinned 8-inch wafers
Ultra-low stress (<30 MPa) and high-purity (>99.99 %) copper for photonic redistribution layers (RDL), MEMS coils, and superconducting structures<\/p>\n\n\n\n
Main Function:
25FAB provides void-free, ultra-uniform copper electroplating up to >100 \u00b5m thickness with multi-layer 3D interconnect capability on 4\u20138 inch photonic, piezoelectric, and compound-semiconductor wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
advanced PVD: sputter & e-beam evaporation<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch (200 mm) Volume-Ready Platform<\/p>\n\n\n\n
Reactive & co-sputtering of PZT, AlN, ScAlN, LiNbO\u2083, SiO\u2082, Al\u2082O\u2083, TiO\u2082, ITO, HfO\u2082, Ta\u2082O\u2085 (<0.8 % 1\u03c3 uniformity)
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Precision metals & alloys: Al, Cu, Ti, Ta, Au, Pt, Ni, Cr, W, Mo with stress control \u00b110 MPa
Multi-pocket e-beam evaporation for refractory metals, lift-off stacks, and high-purity superconducting films
Low-temperature (<150 \u00b0C) processes fully compatible with LNOI, InP, and thinned wafers
Single-run capability for seed layers, RDL, electrodes, AR coatings, and complex piezo stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB provides volume-qualified sputter and e-beam evaporation of piezoelectrics, III-V compounds, metals, and high-k\/refractory dielectrics with atomic-level control across 4\u20138 inch wafers for photonics, MEMS, and quantum applications.<\/p>\n<\/div>\n<\/div>\n\n\n\n
wafer-scale nanoimprint lithography (UV-NIL & thermal)<\/strong><\/h2>\n\n\n\n4-inch to Full 8-inch Production Platform<\/p>\n\n\n\n
Resolution down to \u2264 12 nm (half-pitch) and < 30 nm routine on 200 mm wafers Overlay accuracy \u2264 5 nm (3\u03c3) with thermal and UV-curable resists High-throughput imprint (>60 wph) for metalenses, DOEs, AR\/VR waveguides, photonic crystals, and sub-wavelength gratings
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
From single prototypes to 10 k+wph volume \u2014 the fastest path from sub-20 nm photonic nanostructures to market.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nwafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Full-cycle service: master origination (EBL\/stepper), working stamp replication (soft & hard), imprint + RLT, and metallization
Compatible with LiNbO\u2083, LNOI, SOI, quartz, glass, and flexible substrates
Defectivity < 0.1\/cm\u00b2, residual layer thickness < 8 nm, uniformity < 3 %<\/p>\n\n\n\n
Main Function:
25FAB delivers turnkey, volume-ready UV and thermal nanoimprint lithography with \u226412 nm resolution, \u22645 nm overlay, and full 200 mm wafer-scale capability for photonics, metasurfaces, and AR\/VR optics.<\/p>\n<\/div>\n<\/div>\n\n\n\n
wafer-defect inspection machine<\/strong><\/h2>\n\n\n\n4-inch to 8-inch Automated Review & Classification<\/p>\n\n\n\n
Wafer sizes: 4\u2033 \/ 6\u2033 \/ 8\u2033 (290\u20131000 \u00b5m thickness)
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Zero blind spots. Zero escapes. Every critical defect caught before it costs you yield.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nPrecision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Detection sensitivity: \u2265 0.2 \u00b5m particles and defects (Bright-Field, Dark-Field, and Photoluminescence modes)
Supported materials: Si, SiC, LiNbO\u2083 (LN), LiTaO\u2083 (LT), LNOI\/LTOI, SOI, quartz, glass, GaN, InP, and all composite\/heterogeneous photonic wafers
Full-surface macro + micro inspection, automated defect classification, and KLARF export
Integrated with our metrology cluster for instant feedback into lithography, etch, and deposition loops<\/p>\n\n\n\n
Main Function:
25FAB provides automated \u22650.2 \u00b5m defect detection and classification (BF\/DF\/PL) across 4\u20138 inch Si, SiC, LiNbO\u2083, LiTaO\u2083, and all photonic\/compound wafers with full traceability and process-loop integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Precision Wafer Trimming & Edge Profiling<\/strong><\/h2>\n\n\n\nWafer size: up to 8-inch (200 mm) full wafers and non-standard shaped substrates
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nprecision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Thickness range: \u2264 1000 \u00b5m (starting material)
Edge trimming and chamfering with micron-level accuracy
Materials: LiNbO\u2083, LiTaO\u2083, LNOI\/LTOI, quartz, sapphire, SiC, GaN, InP, SOI, glass, and all bonded or composite substrates
Clean, chipping-free edges compatible with subsequent lithography and bonding step.<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB provides accurate wafer trimming, edge profiling, and chamfering for all \u22648-inch standard and non-standard substrates, including fragile piezoelectric and photonic materials.<\/p>\n<\/div>\n<\/div>\n\n\n\n
precision wafer flatness & geometry metrology<\/strong><\/h2>\n\n\n\n4-inch to 8-inch | 300\u20131000 \u00b5m Thickness<\/p>\n\n\n\n
Dual-sided interferometric + capacitive sensing
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Ensures perfect planarity for 3D integration, wafer bonding, and ultra-thin photonic devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nnanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Key parameters: TTV \u2264 0.3 \u00b5m, LTV \u2264 0.2 \u00b5m, Warp\/Bow \u2264 3 \u00b5m, Thickness variation \u2264 0.5 \u00b5m (3\u03c3 across 200 mm)
Full-surface, high-density mapping (>1 million points\/wafer) in <60 s
Compatible with all substrates: LiNbO\u2083, LTO, LNOI, SOI, SiC, GaN, InP, quartz, glass, bonded and thinned wafers
Real-time GBIR\/SBIR\/SFQR reporting and direct feed-forward to CMP, bonding, and lithography tools<\/p>\n\n\n\n
Main Function:
25FAB delivers sub-micron TTV\/Warp\/Bow\/Thickness metrology and full geometric characterization for all 4\u20138 inch substrates, from standard silicon to fragile piezoelectric and bonded photonic wafers.<\/p>\n<\/div>\n<\/div>\n\n\n\n
nanoscribe-powered two-photon polymerization (TPP) 3D printing service<\/strong><\/h2>\n\n\n\nTrue Sub-Micron Direct-Write on 4\u20138 inch Wafers & Fibers<\/p>\n\n\n\n
Equipment: Nanoscribe Photonics Professional GT2 + Quantum X align
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Seamless integration of 3D nano-optics directly onto your photonic chips or fiber facets \u2013 from one-off prototypes to thousands of devices per wafer.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\ncomprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Lateral feature size: typical 160 nm, guaranteed \u2264 200 nm
Vertical resolution: typical 400\u20131000 nm
Maximum single-field print volume: 500 \u00d7 500 \u00d7 300 \u00b5m (stitching-free)
Refractive index: n = 1.56 (IP-Dip \/ custom high-RI resists available)
Substrates: LNOI, SOI, glass, quartz, optical fiber end-faces, InP, GaN, pre-patterned chips
Proven structures: fiber-tip metalenses, high-NA freeform lenses, micro-needles, 3D photonic wire bonding, diffractive elements, photonic crystal woodpiles, AR\/VR near-eye optics<\/p>\n\n\n\n
Main Function:
25FAB delivers industry-leading Nanoscribe two-photon polymerization 3D printing with \u2264160 nm lateral resolution on wafers, fibers, and pre-structured photonic chips for metalenses, fiber-top optics, freeform micro-optics, and 3D heterogeneous integration.<\/p>\n<\/div>\n<\/div>\n\n\n\n
comprehensive piezoelectric thin-film characterization lab<\/strong><\/h2>\n\n\n\nFull 4\u20138 inch Wafer Mapping | Production-Ready Accuracy<\/p>\n\n\n\n
d\u2083\u2083 & d\u2083\u2081 coefficients: direct piezo-response (Aixacct TF-2000E & double-beam LVP), routine >250 pm\/V for AlScN, >150 pm\/V for PZT
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
All measurements performed with calibration traceable to PTB\/NIST standards, reports accepted by leading RF filter, PMUT, and TFLN modulator customers worldwide.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nFIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
e\u2083\u2081,eff mapping: wafer-level bending method, <3 % non-uniformity across 200 mm P-E hysteresis & fatigue: up to 1 MV\/cm, >10\u00b9\u2070 cycles endurance testing
Dielectric constant & loss: 1 kHz\u201310 MHz, tan\u03b4 < 0.01 typical Leakage current: fA-level resolution, breakdown >8 MV\/cm
Full-wafer ferroelectric uniformity mapping: 49\u2013121 sites in <30 min
Curie temperature & phase confirmation: in-situ heating + Raman\/XRD<\/p>\n\n\n\n
Main Function:
25FAB provides full electrical and piezoelectric characterization (d\u2083\u2083, e\u2083\u2081, P-E, fatigue, leakage, dielectric) with wafer-scale mapping on 4\u20138 inch AlN, ScAlN, PZT, PLZT, and LN thin films for production release and process qualification.<\/p>\n<\/div>\n<\/div>\n\n\n\n
FIB + TEM service for photonic & piezoelectric devices<\/strong><\/h2>\n\n\n\nTEM lamella preparation: FEI Helios G4 CX & Scios 2 DualBeam FIB
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
\n\n\nadvanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
\u2013 Routine thickness \u2264 30 nm (critical for HR-TEM\/STEM)
\u2013 Protective Pt\/GaN-specific low-kV cleaning, <2 nm amorphous edge damage
\u2013 Site-specific cross-sections on LiNbO\u2083, AlScN, PZT, LNOI, InP PICs, metasurfaces
\u2013 High-throughput: 4\u20136 perfect lamellae per 8-hour shift
Atomic-resolution TEM\/STEM:
\u2013 Thermo Fisher Spectra 300 Cs-corrected (300 kV)
\u2013 Resolution: 0.06 nm (STEM), 0.12 nm (TEM)
\u2013 Routine EELS & EDX mapping of Sc doping profile in AlScN, domain structure in LN, interface quality in LNOI stacks<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB delivers damage-free FIB TEM sample preparation (<30 nm lamellae) and atomic-resolution Cs-corrected TEM\/STEM\/EELS analysis on all 4\u20138 inch photonic, piezoelectric, and compound-semiconductor devices.<\/p>\n<\/div>\n<\/div>\n\n\n\n
advanced surface & materials characterization suite<\/strong><\/h2>\n\n\n\nAFM (Bruker Dimension Icon):
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
\nMain Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
\u2013 Ra < 0.1 nm on polished LN\/Si\u2083N\u2084, peak-force QNM, conductive-AFM, piezo-response (PFM) wafer mapping
FE-SEM (Zeiss Gemini 500):
\u2013 Resolution 0.8 nm @ 15 kV, In-lens\/SE\/BSE, low-kV imaging of LNOI\/TFLN without charging
EDS\/EDX (Oxford X-Max\u207f 150 mm\u00b2):
\u2013 Element mapping from B to U, Sc distribution in AlScN, interface analysis in bonded stacks
Integrated workflow: 4\u20138 inch wafer-capable stages, <30 min SEM\u2192AFM\u2192EDX cross-correlation<\/p>\n<\/div>\n<\/div>\n\n\n\n
Main Function:
25FAB provides AFM (topography, PFM, c-AFM), high-resolution FE-SEM, and quantitative EDX analysis with full 200 mm wafer mapping for photonic, piezoelectric, and compound-semiconductor materials.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
services -> fabrication micro and nano \u2013 fabrication service photo lithographie Precision Lithography Foundry \u2013 10 nm to 100 nm, 4\u2033 to 8\u2033 Wafers25FAB offers a comprehensive in-house lithography suite, seamlessly integrating 200 kV electron beam lithography (\u2264 10 nm resolution, ideal for metasurfaces and quantum photonics), 193 nm DUV immersion stepper (100 nm features […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page_home_en","meta":{"footnotes":""},"class_list":["post-647","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/comments?post=647"}],"version-history":[{"count":21,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions"}],"predecessor-version":[{"id":1023,"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/pages\/647\/revisions\/1023"}],"wp:attachment":[{"href":"https:\/\/25fab.ch\/index.php\/wp-json\/wp\/v2\/media?parent=647"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}